Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and implementation common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) stack (GS) as engineering techniques its analog/RF parameters are compared to those Single-Material Gate (GAA-SMG-CP device. Both (GAA) devices designed using Silvaco TCAD tool. GAA structures have demonstrated good control because holds channel, which is an inherent advantage for both discussed herein. charge plasma dopingless technique used, in drain regions formed metal contacts necessary work functions rather than doping. eliminates need doping, reducing fluctuations caused by random dopants lowering device’s thermal budget. such DMG GS significantly improved current characteristics played crucial role obtaining maximum gain circuit designs. lookup table (LUT) approach used CS with transient response analyzed device where achieved 15.06 dB. superior showcased analog, RF analysis proves strong candidature future nanoscale low-power applications.